On-State Current
1.25 Amp
FS02...N
SURFACE MOUNT SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required using surface mount
technology.
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current*
Average On-state Current*
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER CONDITIONS Min. Max. Unit
SOT223
(Plastic)
Gate Trigger Current
< 200 µA
Off-State Voltage
200 V ÷ 800 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I
2
t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
Half Cycle, Θ = 180 º, T
tab
= 95 ºC
Half Cycle, Θ = 180 º, T
tab
= 95 ºC
Half Cycle, 60 Hz, T
j
= 25 ºC
Half Cycle, 50 Hz, T
j
= 25 ºC
t
p
= 10ms, Half Cycle
I
GR
= 10 µA, T
j
= 25 ºC
20 µs max.
20 µs max.
20 ms max.
10s max.
1.25
0.8
25
22.5
2.5
8
-40
-40
A
A
A
A
A
2
s
V
A
W
W
ºC
ºC
ºC
1.2
3
0.2
+125
+150
260
* with 5 cm
2
copper (e= 35µm) surface under tab.
Jun - 02
Repetitive Peak Off State
Voltage
PARAMETER CONDITIONS VOLTAGE UnitSYMBOL
V
DRM
V
RRM
R
GK
= 1 KΩ
B
200
V
D
400
M
600
N
800
