©2000 Fairchild Semiconductor International
December 2000
Rev. A2, December 2000
FQD10N20L / FQU10N20L
QFET
QFETQFET
QFET
TM
FQD10N20L / FQ U10N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC conv ert ers,
switch mode power supplies, and motor control.
Features
• 7.6A, 200V, R
DS(on)
= 0.36Ω @V
GS
= 10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
operation from logic drivers
Absolute Maxim um Ratings T
C
= 25°C unless otherwise noted
Thermal Char acteristics
Symbol Parameter FQD10N20L / FQU10N20L Units
V
DSS
Drain-Source Voltage 200 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
7.6 A
- Continuous (T
C
= 100°C)
4.8 A
I
DM
Drain Current - Pulsed
(Note 1)
30.4 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
180 mJ
I
AR
Avalanche Current
(Note 1)
7.6 A
E
AR
Repetitive Avalanche Energy
(Note 1)
5.1 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
5.5 V/ns
P
D
Power Dissipation (T
A
= 25°C) *
2.5 W
Power Dissipation (T
C
= 25°C)
51 W
- Derate above 25°C 0.4 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300 °C
Symbol Parameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 2.48 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
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S
D
G
I-PAK
FQU Series
D-P AK
FQD Series
G
S
D
G
S
D
