FJD5553 — NPN Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD5553 Rev. A1 1
April 2008
FJD5553
NPN Silicon Transistor
High Voltage Switch Mode Appl ication
• Fast Speed Switching
• Wide Safe Operating Area
• Suitable for Electronic Ballast Application
Absolute Maximum Ratings * T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T
a
=25°C unless otherwise noted
* Device mounted on minimum pad size
Ordering Information
Symbol Parameter Value Units
BV
CBO
Collector-Base Voltage 1050 V
BV
CEO
Collector-Emitter Voltage 400 V
BV
EBO
Emitter-Base Voltage 14 V
I
C
Collector Current (DC ) 3 A
I
CP
Collector Current (Pu lse ) 6 A
I
B
Base Current (DC) 1 A
I
BP
Collector Current (Pu lse ) 2 A
P
C
Collector Dissipation 1.25 W
T
J
Junction Temperature 150 °C
T
STG
Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Value Units
R
θJA
Thermal Resistance, Junction to Ambient 100 °C/W
Part Number Marking Package Packing Method Remarks
FJD5553TM J5553 D-PAK Tape & Reel
1. Base 2. Collector 3. Emitter
1
DPAK
Marking : J5553
