Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: February 2011
1
FC694601
Silicon N-channel MOS FET
For switching circuits
Overview
FC694601 is N-channel dual type small signal MOS FET employed small size
surface mounting package.
Features
Low drain-source ON resistance: R
DS(on)
typ. = 6 W (V
GS
= 4.0 V)
High-speed switching
Small size surface mounting package: SSMini6-F3-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
FET1
FET2
Drain-source surrender voltage V
DSS
60 V
Gate-source surrender voltage V
GSS
±12
V
Drain current I
D
100 mA
Peak drain current I
DP
200 mA
Overall
Total power dissipation P
T
125 mW
Channel temperature T
ch
150
°C
Storage temperature T
stg
–55 to +150
°C
Package
Code
SSMini6-F3-B
Pin Name
1: Source (FET1) 4: Source (FET2)
2: Gate (FET1) 5: Gate (FET2)
3: Drain (FET2) 6: Drain (FET1)
Marking Symbol: V6
Internal Connection
3
(D2)
(S2)
4
1
(S1)
2
(G1)
(D1)
6
(G2)
5
FET1
FET2