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EX29F160-70RTCI

EX29F160-70RTCI首页预览图
型号: EX29F160-70RTCI
PDF文件:
  • EX29F160-70RTCI PDF文件
  • EX29F160-70RTCI PDF在线浏览
功能描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
PDF文件大小: 770.96 Kbytes
PDF页数: 共59页
制造商: EXCELSEMI[Excel Semiconductor Inc.]
制造商LOGO: EXCELSEMI[Excel Semiconductor Inc.] LOGO
制造商网址:
捡单宝EX29F160-70RTCI
PDF页面索引
120%
ESI
ESI
1
Rev. 0E May 25, 2006
ES29DL320
Excel Semiconductor inc.
ADVANCED INFORMATION
ES29DL320
32Mbit(4M x 8/2M x 16)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
GENERAL FEATURES
Single powe r su pp ly operation
- 2.7V - 3.6V for read, program and erase operations
Simultaneous Read/Write operations
- Data can be continuously read from one bank while
executing erase/program functions in another bank
- Zero latency between read and write operations
Multi-Bank architectur e
- Read may occur in any of the banks not being
written or erased
- Multi-Bank may be grouped by customer to achieve
desired bank divisions
Top or Bottom boot block
- ES29DL320T for Top boot block device
- ES29DL320B for Bottom boot block device
A 256 bytes of extra sector for sec urity code
- Factory locked
- Customer lockable
Package Options
- 48-pin TSOP
- 48-ball FBGA
- All Pb-free products are RoHS-Compliant
Low Vcc write inhibit
Manufactured on 0.18um process technology
Compatible with JEDEC standards
- Pinout and software compatible with single-power
supply flash standard
DEVICE PERFORMANCE
Read access time
- 70ns/90ns for normal Vcc range ( 2.7V ~ 3.6V )
Program and era se time
- Program time : 6us/byte, 8us/word ( typical )
- Accelerated program time : 4us/word ( typical )
- Sector erase time : 0.7sec/sector ( typical )
Power consumption (typical values)
- 15uA in standby or automatic sleep mode
- 10mA active read current at 5MHz
- 15mA active write current during program or erase
Minimum 100,000 prog ram/erase cycles per sector
20 Year data retention at 125
o
C
SOFTWARE FEATURES
Erase Suspend / Erase Resume
Data# poll and toggle for program/erase st atus
CFI ( Common Flash Interface) supp orted
Unlock Bypass Program
Autoselec t mode
Auto-sleep mode after t
ACC
+ 30ns
HARDWARE FEATURES
Hardware reset input pin ( RESET#)
- Provides a hardware reset to device
- Any internal device operation is terminated and the
device returns to read mode by the reset
Ready/Busy# output pin ( R Y/BY#)
- Provides a program or erase operational status
about whether it is finished for read or still being
progressed
WP#/ACC input pin
- Two outermost boot sectors are protected when
WP# is set to low, regardless of sector protection
- Program speed is accelerated by raising WP#/ACC
to a high voltage (8.5V ~ 9.5V)
Sector protection / unprotection ( RESET# , A9 )
- Hardware method of locking a sector to prevent
any program or erase operation within that sector
- Two methods are provided :
- In-system method by RESET# pin
- A9 high-voltage method for PROM programmers
Temporary Sector unprotection ( RESET# )
- Allows temporary unprotection of previously
protected sectors to change data in-system
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