CentralCentral
CentralCentral
Central
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
TM
252
CQ89D
CQ89M
CQ89N
2.0 AMP TRIAC
400 THRU 800 VOLTS
SOT-89 CASE
MAXIMUM RATINGS (T
C
=25
o
C)
SYMBOL CQ89D CQ89M CQ89N UNITS
Peak Repetitive Off-State Voltage V
DRM
400 600 800 V
RMS On-State Current (T
C
=80
o
C) I
T(RMS)
2.0 A
Peak One Cycle Surge (10ms) I
TSM
10 A
Peak Gate Current I
GM
1.0 A
Average Gate Power Dissipation P
G(AV)
0.1 W
StorageTemperature T
stg
-45 to +150
o
C
Junction Temperature T
J
-45 to +125
o
C
Thermal Resistance Θ
J-C
10
o
C/W
ELECTRICAL CHARACTERISTICS (T
C
=25
o
C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
DRM
V
D
=Rated V
DRM
5.00 µA
I
DRM
V
D
=Rated V
DRM
, T
C
=125
o
C 200 µA
I
GT
V
D
=12V, QUAD I, II, III, IV 25 mA
I
H
V
D
=12V 25 mA
V
GT
V
D
=12V 2.00 V
V
TM
I
T
=3.0A 1.75 V
dv/dt V
D
=
2
V
DRM
, T
C
=125
o
C 100 V/µs
SOT-89
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ89D
series types are epoxy molded silicon triacs
designed for full wave AC control applications
featuring gate triggering in all four (4)
quadrants.
