CAT25128
http://onsemi.com
2
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters Ratings Units
Operating Temperature −45 to +130 °C
Storage Temperature −65 to +150 °C
Voltage on any Pin with Respect to Ground (Note 1) −0.5 to +6.5 V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
CC
+ 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V
CC
+ 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter Min Units
N
END
(Notes 3, 4) Endurance 1,000,000 Program / Erase Cycles
T
DR
Data Retention 100 Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, V
CC
= 5 V, 25°C.
4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when
a single byte has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order
to benefit from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS − MATURE PRODUCT
(V
CC
= 1.8 V to 5.5 V, T
A
= −40°C to +85°C and V
CC
= 2.5 V to 5.5 V, T
A
= −40°C to +125°C, unless otherwise specified.)
Symbol Parameter Test Conditions Min Max Units
I
CCR
Supply Current
(Read Mode)
Read, V
CC
= 5.5 V,
SO open
10 MHz / −40°C to 85°C 2 mA
5 MHz / −40°C to 125°C 2 mA
I
CCW
Supply Current
(Write Mode)
Write, V
CC
= 5.5 V,
SO open
10 MHz / −40°C to 85°C 4 mA
5 MHz / −40°C to 125°C 4 mA
I
SB1
Standby Current V
IN
= GND or V
CC
, CS = V
CC
,
WP
= V
CC
, HOLD = V
CC
,
V
CC
= 5.5 V
T
A
= −40°C to +85°C 1
mA
T
A
= −40°C to +125°C 3
mA
I
SB2
Standby Current V
IN
= GND or V
CC
, CS = V
CC
,
WP
= GND, HOLD = GND,
V
CC
= 5.5 V
T
A
= −40°C to +85°C 4
mA
T
A
= −40°C to +125°C 5
mA
I
L
Input Leakage Current V
IN
= GND or V
CC
−2 2
mA
I
LO
Output Leakage
Current
CS = V
CC
,
V
OUT
= GND or V
CC
T
A
= −40°C to +85°C −1 1
mA
T
A
= −40°C to +125°C −1 2
mA
V
IL
Input Low Voltage −0.5 0.3 V
CC
V
V
IH
Input High Voltage 0.7 V
CC
V
CC
+ 0.5 V
V
OL1
Output Low Voltage V
CC
> 2.5 V, I
OL
= 3.0 mA 0.4 V
V
OH1
Output High Voltage V
CC
> 2.5 V, I
OH
= −1.6 mA V
CC
− 0.8 V V
V
OL2
Output Low Voltage
V
CC
> 1.8 V, I
OL
= 150 mA
0.2 V
V
OH2
Output High Voltage
V
CC
> 1.8 V, I
OH
= −100 mA
V
CC
− 0.2 V V
