BZX79C2V 4 - BZX79C75
500mW Silicon Planar Pow
Silicon Planar Zener Diodes
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter Symbol Value Unit
Continuous Forward Current I
F
250 mA
Power Dissipation P
tot
500
1)
mW
Junction Temperature T
j
175
O
C
Storage Temperature Range T
stg
- 55 to + 175
O
C
1)
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
Characteristics at T
a
= 25
O
C
Parameter Symbol Max. Unit
Thermal Resistance Junction to Ambient Air
R
thA
0.3
1)
K/mW
Forward Voltage
at I
F
= 100 mA
V
F
1.5 V
1)
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
Max.
3.9
Max.
1.9
Glass Case DO-35
Max.
0.5
Mi
n. 27.5
Mi
n. 27.5
XXX
Cathode Band
Part No
.
Dimen
sions in mm
Black
Blac
k
BZX79C SERIES
er Zener Diodes
1 of 3
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com