256K (32K x 8)
Paged
CMOS
E
2
PROM
Features
•
Fast Rea d Access Ti me - 150 ns
•
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
•
Fast Wri te Cyc le Tim es
Page Wri te Cyc le Time: 3 ms or 10 ms Maximum
1 to 64-Byte Page Write Opera tion
•
Low Power Dissipation
50 mA Active Current
200 µA CMOS Standby Current
•
Hardware and Software Data Protection
•
DATA Polli ng for End of Wri te Dete cti on
•
High Rel ia bility C MOS Te chnolo gy
Endura nc e: 10
4
or 10
5
Cycle s
Data Retention: 10 Years
•
Singl e 5V ± 10% Supply
•
CMOS and TTL Compatible Inputs and Outputs
•
JEDEC Approv ed Byte-W id e Pin ou t
•
Full Military, Commercial, and Industrial Temperature Ranges
Description
The AT28C256 is a high-perfor mance Electric ally Erasable and Programmable Read
Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access
times to 150 ns with power dissipation of just 440 mW. When the device is deselected,
the CMOS standby current is less than 200 µA.
(continued)
LCC, PLCC
Top View
Pin Name Function
A0 - A14 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/O utput s
NC No Connect
DC Don’t Connect
Pin Configur a tions
TSOP
Top View
PGA
Top View
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
CERDIP, PDIP,
FLATPACK, SOIC
Top View
AT28C256
2-217
