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AS4DDR32M72-10/ET

AS4DDR32M72-10/ET首页预览图
型号: AS4DDR32M72-10/ET
PDF文件:
  • AS4DDR32M72-10/ET PDF文件
  • AS4DDR32M72-10/ET PDF在线浏览
功能描述: 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
PDF文件大小: 357.18 Kbytes
PDF页数: 共19页
制造商: AUSTIN[Austin Semiconductor]
制造商LOGO: AUSTIN[Austin Semiconductor] LOGO
制造商网址: http://www.austinsemiconductor.com
捡单宝AS4DDR32M72-10/ET
PDF页面索引
120%
ii
ii
i
PEMPEM
PEMPEM
PEM
2.4G2.4G
2.4G2.4G
2.4G
b SDRAM-DDRb SDRAM-DDR
b SDRAM-DDRb SDRAM-DDR
b SDRAM-DDR
AS4DDR32M72PBG
AS4DDR32M72PBG
Rev. 1.2 06/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
Austin Semiconductor, Inc.
Paramete
Unit
Voltage on V
CC
, V
CCQ
Supply relative to V
SS
-1 ot 3.6 V
Voltage on I/O pins relative to V
SS
-1 ot 3.6 V
Operating Temperature T
A
(Mil)
-55 to +125
o
C
Operating Temperature T
A
(Ind)
-40 to +85
o
C
Storage Temperature, Plastic -55 to +150
o
C
Note: Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational conditions for extended periods may affect reliability.
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE (NOTE 13)
Paramete
r
Symbol Max Unit
Input Capacitance: CLK
C
11
8pF
Addresses, BA0-1 Input Capacitance CA 30 pF
Input Capacitance: All other input-only pins
C
12
9pF
Input/Output Capacitance: I/O's
C
10
12 pF
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