APTM20DAM04
APTM20DAM04 – Rev 1 May, 2004
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:/
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ower.com
6
6
Delay Times vs Current
t
d(on)
t
d(off)
0
20
40
60
80
100
120
0 100 200 300 400 500 600
I
D
, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
V
DS
=133V
R
G
=1.2Ω
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600
I
D
, Drain Current (A)
t
r
and t
f
(ns)
V
DS
=133V
R
G
=1.2Ω
T
J
=125°C
L=100µH
Switching Energy vs Current
E
on
E
off
0
2
4
6
8
0 100 200 300 400 500 600
I
D
, Drain Current (A)
E
on
and E
off
(mJ)
V
DS
=133V
R
G
=1.2Ω
T
J
=125°C
L=100µH
E
on
E
off
2
4
6
8
10
12
02.557.51012.5
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
V
DS
=133V
I
D
=372A
T
J
=125°C
L=100µH
0
50
100
150
200
250
300
350
50 100 150 200 250 300 350
I
D
, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
V
DS
=133V
D=50%
R
G
=1.2Ω
T
J
=125°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
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