APTM20DAM04
APTM20DAM04 – Rev 1 May, 2004
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:/
www.advanced
ower.com
5
6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125 150
T
J
, Junction Temperature (°C)
BV
DSS
, Drain to Source Breakdown
Volta
e
Normalized
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
T
J
, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
V
GS
=10V
I
D
= 186A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
C
, Case Temperature (°C)
V
GS
(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
100ms
10ms
1ms
100µs
1
10
100
1000
10000
1 10 100 1000
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
Single pulse
T
J
=150°C
limited by
R
DSon
Ciss
Crss
Coss
100
1000
10000
100000
0 1020304050
V
DS
, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
V
DS
=40V
V
DS
=100V
V
DS
=160V
0
2
4
6
8
10
12
14
0 80 160 240 320 400 480 560 640
Gate Charge (nC)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
I
D
=372A
T
J
=25°C
