APTM20DAM04
APTM20DAM04 – Rev 1 May, 2004
APT website
htt
:/
www.advanced
ower.com
1
6
OUT
0/VBUSVBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 200 V
T
c
= 25°C 372
I
D
Continuous Drain Current
T
c
= 80°C 278
I
DM
Pulsed Drain current 1488
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 4
mW
P
D
Maximum Power Dissipation T
c
= 25°C 1250 W
I
AR
Avalanche current (repetitive and non repetitive) 100 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 200V
R
DSon
= 4mW max @ Tj = 25°C
I
D
= 372A @ Tc = 25°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
Features
· Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
Boost chopper
MOSFET Power Module
