Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP9992AGP-HF
0
40
80
120
160
024681012
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
=150
o
C
10V
8.0V
7.0V
6.0V
V
G
=5.0V
0
50
100
150
200
250
300
0 4 8 12 16 20 24
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
=25
o
C
10V
8.0V
7.0V
6.0V
V
G
= 5.0V
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
T
j
, Junction Temperature (
o
C)
Normalized R
DS(ON)
I
D
=40A
V
G
=10V
0
10
20
30
40
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
0.0
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
T
j
, Junction Temperature (
o
C )
Normalized V
GS(th)
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
T
j
, Junction Temperature (
o
C)
Normalized BV
DSS
(V)
I
D
=250uA
I
D
=1mA
