www.doingter.cn
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Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent R
DS(on)
with low gate charge.
It can be used in a wide variety of applications.
Features：
1) V
DS
=60V,I
D
=11A,R
DS(ON)
<75mΩ@V
GS
=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra R
DS(ON)
.
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
C
=25℃ unless otherwise noted)
Ratings
Continuous Drain Current-T
C
=25℃
Continuous Drain Current-T
C
=100℃
44
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Characteristics：
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
D
G
D
S
AP9977GJ-HF
