Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA 60 - - V
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=40A - - 5 mΩ
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
D
=250uA 2 - 4 V
g
fs
Forward Transconductance V
DS
=10V, I
D
=40A - 82 - S
I
DSS
Drain-Source Leakage Current
V
DS
=48V, V
GS
=0V - - 25
uA
I
GSS
Gate-Source Leakage V
GS
= +20V, V
DS
=0V - - +100
nA
Q
g
Total Gate Charge
2
I
D
=30A - 90 150
nC
Q
gs
Gate-Source Charge V
DS
=48V - 17 -
nC
Q
gd
Gate-Drain ("Miller") Charge V
GS
=10V - 47 -
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=30V - 20 -
ns
t
r
Rise Time I
D
=30A - 80 -
ns
t
d(off)
Turn-off Delay Time R
G
=3.3Ω -40-
ns
t
f
Fall Time V
GS
=10V - 60 -
ns
C
iss
Input Capacitance V
GS
=0V - 3500 6300
pF
C
oss
Output Capacitance V
DS
=25V - 1120 -
pF
C
rss
Reverse Transfer Capacitance f=1.0MHz - 310 -
pF
R
g
Gate Resistance f=1.0MHz - 1.4 -
Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=40A, V
GS
=0V - - 1.3
V
t
rr
Reverse Recovery Time
2
I
S
=10A, V
GS
=0V - 75 -
ns
Q
rr
Reverse Recovery Charge dI/dt=100A/µs - 170 -
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 171A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP98T06GS-HF
4.Surface mounted on 1 in
2
copper pad of FR4 board
