AP98T06GS-HF
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement
BV
DSS
60V
▼ Lower Gate Charge R
DS(ON)
5mΩ
▼ Fast Switching Characteristic I
D
80A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings@T
j
=25
C(unless otherwise specified)
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
DM
A
P
D
@T
C
=25℃ W
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 0.5 ℃/W
Rthj-a 40 ℃/W
Data and specifications subject to change without notice
201501273
1
Halogen-Free Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Parameter Rating
Drain-Source Voltage 60
Pulsed Drain Current
1
320
Gate-Source Voltage +
20
Drain Current, V
GS
@ 10V
3
80
Total Power Dissipation 250
-55 to 150
Operating Junction Temperature Range -55 to 150
Thermal Data
Parameter
Storage Temperature Range
G
D
S
G
D
S
TO-263(S)
P98T06 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-263 package is widely preferred for commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.