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AO4425_10

AO4425_10首页预览图
型号: AO4425_10
PDF文件:
  • AO4425_10 PDF在线浏览
功能描述: 38V P-Channel MOSFET
PDF文件大小: 173.8 Kbytes
PDF页数: 共4页
制造商: AOSMD[Alpha & Omega Semiconductors]
制造商LOGO: AOSMD[Alpha & Omega Semiconductors] LOGO
制造商网址: http://www.aosmd.com
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PDF页面索引
100%
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
26 40
50 75
R
θJL
14 24
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±25Gate-Source Voltage
Drain-Source Voltage -38
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
-11
-50Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
3.1
2
-55 to 150
T
A
=70°C
I
D
-14
AO4425
38V P-Channel MOSFET
Product Summary
V
DS
(V) = -38V
I
D
= -14A (V
GS
= -20V)
R
DS(ON)
< 10m (V
GS
= -20V)
R
DS(ON)
< 11m (V
GS
= -10V)
ESD Rating: 4000V HBM
100% UIS Tested
100% Rg Tested
General Description
The AO4425 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected.
S
G
D
SOIC-8
Top View Bottom View
D
D
D
D
G
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
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