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AM5706BCBDDEA

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型号: AM5706BCBDDEA
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功能描述: Sitara Processors
PDF文件大小: 4339.62 Kbytes
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制造商: TI1[TI store]
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制造商网址: http://www.ti.com
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120%
ADVANCEINFORMATION
148
AM5706, AM5708
SPRS961B AUGUST 2016REVISED SEPTEMBER 2017
www.ti.com
Submit Documentation Feedback
Product Folder Links: AM5706 AM5708
Specifications Copyright © 2016–2017, Texas Instruments Incorporated
Table 5-14. Dual Voltage LVCMOS DC Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN NOM MAX UNIT
I
DRIVE
Pin Drive strength at PAD Voltage = 0.45V or
VDDS-0.45V
6 mA
I
IN
Input current at each I/O pin 16 µA
I
OZ
I
OZ
(I
PAD
Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I
(PAD)
)
is measured and is reported as I
OZ
16 µA
I
IN with pulldown
enabled
Input current at each I/O pin with weak pulldown
enabled measured when PAD = VDDS
50 120 210 µA
I
IN with pullup
enabled
Input current at each I/O pin with weak pullup
enabled measured when PAD = 0
60 120 200 µA
C
PAD
Pad capacitance (including package capacitance) 4 pF
Z
O
Output impedance (drive strength) 40 Ω
3.3-V Mode
V
IH
Input high-level threshold 2 V
V
IL
Input low-level threshold 0.8 V
V
HYS
Input hysteresis voltage 200 mV
V
OH
Output high-level threshold (I
OH
= 100 µA) VDDS-0.2 V
V
OL
Output low-level threshold (I
OL
= 100 µA) 0.2 V
I
DRIVE
Pin Drive strength at PAD Voltage = 0.45V or
VDDS-0.45V
6 mA
I
IN
Input current at each I/O pin 65 µA
I
OZ
I
OZ
(I
PAD
Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I
(PAD)
)
is measured and is reported as I
OZ
65 µA
I
IN with pulldown
enabled
Input current at each I/O pin with weak pulldown
enabled measured when PAD = VDDS
40 100 200 µA
I
IN with pullup
enabled
Input current at each I/O pin with weak pullup
enabled measured when PAD = 0
10 100 290 µA
C
PAD
Pad capacitance (including package capacitance) 4 pF
Z
O
Output impedance (drive strength) 40 Ω
(1) VDDS in this table stands for corresponding power supply. For more information on the power supply name and the corresponding ball,
see Table 4-1, POWER [11] column.
5.7.1 USBPHY DC Electrical Characteristics
NOTE
USB1 instance is compliant with the USB3.0 SuperSpeed Transmitter and Receiver
Normative Electrical Parameters as defined in the USB3.0 Specification Rev 1.0 dated Jun 6,
2011.
NOTE
USB1 and USB2 Electrical Characteristics are compliant with USB2.0 Specification Rev 2.0
dated April 27, 2000 including ECNs and Errata as applicable.
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