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AM5706, AM5708
SPRS961B –AUGUST 2016–REVISED SEPTEMBER 2017
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Specifications Copyright © 2016–2017, Texas Instruments Incorporated
Table 5-8. Dual Voltage LVCMOS I
2
C DC Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN NOM MAX UNIT
I
2
C Standard Mode – 3.3 V
V
IH
Input high-level threshold 0.7 × VDDS V
V
IL
Input low-level threshold 0.3 × VDDS V
V
hys
Hysteresis 0.05 × VDDS V
I
IN
Input current at each I/O pin with an input voltage
between 0.1 × VDDS to 0.9 × VDDS
31 80 µA
I
OZ
I
OZ
(I
PAD
Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I
(PAD)
)
is measured and is reported as I
OZ
31 80 µA
C
IN
Input capacitance 10 pF
V
OL3
Output low-level threshold open-drain at 3-mA
sink current
0.4 V
I
OLmin
Low-level output current @V
OL
=0.4V 3 mA
I
OLmin
Low-level output current @V
OL
=0.6V for full drive
load (400pF/400KHz)
6 mA
t
OF
Output fall time from V
IHmin
to V
ILmax
with a bus
capacitance CB from 5 pF to 400 pF
250 ns
I
2
C Fast Mode – 3.3 V
V
IH
Input high-level threshold 0.7 × VDDS V
V
IL
Input low-level threshold 0.3 × VDDS V
V
hys
Hysteresis 0.05 × VDDS V
I
IN
Input current at each I/O pin with an input voltage
between 0.1 × VDDS to 0.9 × VDDSS
31 80 µA
I
OZ
I
OZ
(I
PAD
Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I
(PAD)
)
is measured and is reported as I
OZ
31 80 µA
C
IN
Input capacitance 10 pF
V
OL3
Output low-level threshold open-drain at 3-mA
sink current
0.4 V
I
OLmin
Low-level output current @V
OL
=0.4V 3 mA
I
OLmin
Low-level output current @V
OL
=0.6V for full drive
load (400pF/400KHz)
6 mA
t
OF
Output fall time from V
IHmin
to V
ILmax
with a bus
capacitance CB from 10 pF to 200 pF (Proper
External Resistor Value should be used as per
I2C spec)
20+0.1 × Cb 250 ns
Output fall time from V
IHmin
to V
ILmax
with a bus
capacitance CB from 300 pF to 400 pF (Proper
External Resistor Value should be used as per
I2C spec)
40 290
(1) VDDS in this table stands for corresponding power supply (i.e. vddshv3). For more information on the power supply name and the
corresponding ball, see Table 4-1, POWER [11] column.
(2) For more information on the I/O cell configurations, see the Control Module section of the Device TRM.
Table 5-9. IQ1833 Buffers DC Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN NOM MAX UNIT
Signal Names in MUXMODE 0: tclk;
Balls: K21;