33 Am29F002/Am29F002N
PRELIMINARY
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 5.0 V V
CC
, 100,000 cyc les. Additio na lly,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for -55), 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time. RESET# not available on Am29F002N.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter Typ (Note 1) Max (Note 2) Unit Comments
Sector Erase Time 1 8 s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time 7 s
Byte Programming Time 7 300 µs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3) 1.8 5.4 s
Description Min Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE #, and RESE T#)
–1.0 V 12.5 V
Input voltage with respect to V
SS
on all I/O pins –1.0 V V
CC
+ 1.0 V
V
CC
Current –100 mA +100 mA
Parameter
Symbol Parameter Description Test Setup Typ Max Unit
C
IN
Input Capacitance V
IN
= 0 6 7.5 pF
C
OUT
Output Capacitance V
OUT
= 0 8.5 12 pF
C
IN2
Control Pin Capacitance V
IN
= 0 7.5 9 pF