40 Am29DL320G
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Prog ramming Performance” section for more information.
Parameter Speed Options
JEDEC Std Description 70 90 120 Unit
t
AVAV
t
WC
Write Cycle Time (Note 1) Min 70 90 120 ns
t
AVWL
t
AS
Address Setup Time Min 0 ns
t
ASO
Address Setup Time to OE# low during toggle bit polling Min 15 15 ns
t
WLAX
t
AH
Address Hold Time Min 45 45 50 ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min 0 ns
t
DVWH
t
DS
Data Setup Time Min 35 45 50 ns
t
WHDX
t
DH
Data Hold Time Min 0 ns
t
OEPH
Output Enable High during toggle bit polling Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min 0 ns
t
ELWL
t
CS
CE# Setup Time Min 0 ns
t
WHEH
t
CH
CE# Hold Time Min 0 ns
t
WLWH
t
WP
Write Pulse Width Min 30 35 50 ns
t
WHDL
t
WPH
Write Pulse Width High Min 3 0 ns
t
SR/W
Latency Between Read and Write Opera tions Min 0 ns
t
WHWH1
t
WHWH1
Programming Operatio n (N ote 2)
Byte Typ 5
µs
Word Typ 7
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ 4 µs
t
WHWH2
t
WHWH2
Sector Erase Operation (No te 2) Typ 0.4 sec
t
VCS
V
CC
Setup Time (Note 1) Min 50 µs
t
RB
Writ e Recove ry Time fr om RY/BY# Min 0 ns
t
BUSY
Program/Erase Valid to RY/BY# Delay Min 90 ns