Am29DL320G 23
Table 11. Device Geometry Definition
Table 12. Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode) Data Description
27h 4Eh 0016h Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of bytes in multi-byte write = 2
N
(00h = not supported)
2Ch 58h 0002h Number of Erase Block Regions within de vice
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
Addresses
(Word Mode)
Addresses
(Byte Mode) Data Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h 86h 0031h Major version number, ASCII
44h 88h 0033h Minor version number, ASCII
45h 8Ah 0001h
Silicon Revision Number
00h = 0.23 µm, 01h = 0.17 µm
46h 8Ch 0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h 8Eh 0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per g roup
48h 90h 0001h
Sector Temporary Unprotec t
00 = Not Supported, 01 = Supported
49h 92h 0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah 94h 0038h
Simultaneous Operation
Number of Sectors (excluding Bank 1)
4Bh 96h 0000h
Burst Mode Type
00 = Not Supported, 01 = Supported