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AM28F256A-120FC

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型号: AM28F256A-120FC
PDF文件:
  • AM28F256A-120FC PDF文件
  • AM28F256A-120FC PDF在线浏览
功能描述: 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
PDF文件大小: 456.67 Kbytes
PDF页数: 共35页
制造商: AMD[Advanced Micro Devices]
制造商LOGO: AMD[Advanced Micro Devices] LOGO
制造商网址: http://www.amd.com
捡单宝AM28F256A-120FC
PDF页面索引
120%
Am28F256A 31
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. 25°C, 12 V V
PP
.
2. Maximum time specified is lower than worst case. Worst case is derived from the Embedded Algorithm internal counter which
allows for a maximum 6000 pulses for both program and erase operations. Typical worst case for program and erase is
significantly less than the actual device limit.
3. Typical worst case = 84 µs. DQ5 = “1” only after a byte takes longer than 96 ms to program.
LATCHUP CHARACTERISTICS
PIN CAPACITANCE
Note: Sampled, not 100% tested. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Limits
CommentsMin
Typ
(Note 1)
Max
(Note 2) Unit
Chip Erase Time 1 10 sec Excludes 00h programming prior to erasure
Chip Programming Time 0.5 12.5 sec Excludes system-level overhead
Write/E rase Cyc les 100,000 Cycles
Byte Programming Time 14 µs
96
(Note 3)
ms
Parameter Min Max
Input Voltage with respect to V
SS
on all pins except I/O pins (Including A9 and V
PP
) 1.0 V 13.5 V
Input Voltage with respect to V
SS
on all pins I/O pins –1.0 V V
CC
+ 1.0 V
Current –100 mA +100 mA
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time.
Parameter
Symbol Parameter Descriptio n Test Conditions Typ M ax Unit
C
IN
Input Capacitance V
IN
= 0 8 10 pF
C
OUT
Output Capacitance V
OUT
= 0 8 12 pF
C
IN2
V
PP
Input Capacitance V
PP
= 0 8 12 pF
Parameter Test Conditions Min Unit
Minimum Pattern Data Ret ent ion Time
150°C 10 Years
125°C 20 Years
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