Data Sheet AD829
Rev. I | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage ±18 V
Internal Power Dissipation
1
8-Lead PDIP (N) 1.3 W
8-Lead SOIC (R) 0.9 W
8-Lead CERDIP (Q) 1.3 W
20-Terminal LCC (E) 0.8 W
Differential Input Voltage
2
±6 V
Output Short-Circuit Duration
Storage Temperature Range
8-Lead CERDIP (Q) and 20-Terminal LCC (E) −65°C to +150°C
8-Lead PDIP (N) and 8-Lead SOIC (R) −65°C to +125°C
Operating Temperature Range
AD829J 0°C to 70°C
AD829S −55°C to +125°C
Lead Temperature (Soldering, 60 sec) 300°C
1
Maximum internal power dissipation is specified so that T
J
does not exceed
150°C at an ambient temperature of 25°C.
2
If the differential voltage exceeds 6 V, external series protection resistors
should be added to limit the input current.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL CHARACTERISTICS
Table 3.
Package Type θ
JA
Unit
100 (derates at 8.7 mW/°C)
8-Lead CERDIP (Q) 110 (derates at 8.7 mW/°C) °C/W
20-Lead LCC (E) 77 °C/W
8-Lead SOIC (R) 125 (derates at 6 mW/°C) °C/W
METALLIZATION PHOTO
Figure 3. Metallization Photo; Contact Factory for Latest Dimensions,
Dimensions Shown in Inches and (Millimeters)
Figure 4. Maximum Power Dissipation vs. Temperature
ESD CAUTION
00880-003
2
1
0.054
(1.37)
0.067 ( 1.70)
SUBSTRATE CONNECTED TO + V
S
8
+V
S
7
–V
S
4
C
COMP
5
OUTPUT
6
3
00880-004
AMBIENT TEMPERATURE (°C)
MAXIMUM POWER DISSIPATION (W)
–55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85 95 105 115
0
0.5
1.0
1.5
2.0
2.5
125
CERDIP
SOIC
PDIP
LCC
