SmartFusion DC and Switching Characteristics
2-78 Revision 10
Temperature Monitor
Unless otherwise noted, temperature monitor performance is specified with a 2N3904 diode-connected
bipolar transistor from National Semiconductor or Infineon Technologies, nominal power supply voltages,
with the output measured using the internal voltage reference with the internal ADC in 12-bit mode and
62.5 Ksps. After digital compensation. Unless otherwise noted, the specifications pertain to conditions
where the SmartFusion cSoC and the sensing diode are at the same temperature.
Table 2-94 • Temperature Monitor Performance Specifications
Specification Test Conditions Min. Typical Max. Units
Input diode temperature range –55 150 °C
233.2 378.15 K
Temperature sensitivity 2.5 mV/K
Intercept Extrapolated to 0K 0 V
Input referred temperature offset
error
At 25°C (298.15K) ±1 1.5 °C
Gain error Slope of BFSL vs. 2.5 mV/K ±1 2.5 % nom.
Overall accuracy Peak error from ideal transfer function ±2 ±3 °C
Input referred noise At 25°C (298.15K) – no output averaging 4 °C rms
Output current Idle mode 100 µA
Final measurement phases 10 µA
Analog settling time Measured to 0.1% of final value, (with
ADC load)
From TM_STB (High) 5 µs
From ADC_START (High) 5 105 µs
AT parasitic capacitance 500 pF
Power supply rejection ratio DC (0–10 KHz) 1.2 0.7 °C/V
Input referred temperature
sensitivity error
Variation due to device temperature
(–40°C to +100°C). External temperature
sensor held constant.
0.005 0.008 °C/°C
Temperature monitor (TM)
operational power supply current
requirements (per temperature
monitor instance, not including ADC
or VAREFx)
VCC33A 200 µA
VCC33AP 150 µA
VCC15A 50 µA
Note: All results are based on averaging over 64 samples.