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A1280A-2VQ176B

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型号: A1280A-2VQ176B
PDF文件:
  • A1280A-2VQ176B PDF文件
  • A1280A-2VQ176B PDF在线浏览
功能描述: ACT2 Family FPGAs
PDF文件大小: 605.87 Kbytes
PDF页数: 共38页
制造商: ACTEL[Actel Corporation]
制造商LOGO: ACTEL[Actel Corporation] LOGO
制造商网址: http://www.actel.com
捡单宝A1280A-2VQ176B
PDF页面索引
120%
v4.0 5
ACT
2 Family FPGAs
Package Thermal Characteristics
The device junction to case thermal characteristic is θjc,
and the junction to ambient air characteristic is
θja. The
thermal characteristics for
θja are shown with two different
air flow rates.
Maximum junction temperature is 150°C.
A sample calculation of the absolute maximum power
dissipation allowed for a PQFP 160-pin package at
commercial temperature is as follows:
Power Dissipation
P = [I
CC
standby + I
CC
active] * V
CC
+ I
OL
* V
OL
* N +
I
OH
* (V
CC
V
OH
) * M
Where:
I
CC
standby is the current flowing when no inputs or outputs
are changing.
I
CC
active is the current flowing due to CMOS switching.
I
OL
, I
OH
are TTL sink/source currents.
V
OL
, V
OH
are TTL level output voltages.
N equals the number of outputs driving TTL loads to V
OL
.
M equals the number of outputs driving TTL loads to V
OH
.
An accurate determination of N and M is problematical
because their values depend on the family type, design
details, and on the system I/O. The power can be divided
into two components: static and active.
Static Power Component
Actel FPGAs have small static power components that
result in lower power dissipation than PALs or PLDs. By
integrating multiple PALs/PLDs into one FPGA, an even
greater reduction in board-level power dissipation can be
achieved.
The power due to standby current is typically a small
component of the overall power. Standby power is
calculated below for commercial, worst case conditions.
I
CC
V
CC
Power
2 mA 5.25V 10.5 mW
The static power dissipated by TTL loads depends on the
number of outputs driving high or low and the DC load
current. Again, this value is typically small. For instance, a
32-bit bus sinking 4 mA at 0.33 V will generate 42 mW with
all outputs driving low, and 140 mW with all outputs driving
high. The actual dissipation will average somewhere
between as I/Os switch states with time.
Active Power Component
Power dissipation in CMOS devices is usually dominated by
the active (dynamic) power dissipation. This component is
frequency dependent, a function of the logic and the
external I/O. Active power dissipation results from charging
internal chip capacitances of the interconnect,
unprogrammed antifuses, module inputs, and module
outputs, plus external capacitance due to PC board traces
Package Type Pin Count θjc
θja
Still Air
θja
300 ft/min Units
Ceramic Pin Grid Array 100
132
176
5
5
8
35
30
23
17
15
12
°C/W
°C/W
°C/W
Ceramic Quad Flat Pack 172 8 25 15 °C/W
Plastic Quad Flat Pack
1
100
144
160
13
15
15
48
40
38
40
32
30
°C/W
°C/W
°C/W
Plastic Leaded Chip Carrier
2
84 12 37 28 °C/W
Very Thin Quad Flat Pack
3
100 12 43 35 °C/W
Thin Quad Flat Pack
4
176 15 32 25 °C/W
Notes:(Maximum Power in Still Air)
1. Maximum Power Dissipation for PQFP packages are 1.9 Watts (100-pin), 2.3 Watts (144-pin), and 2.4 Watts (160-pin).
2. Maximum Power Dissipation for PLCC packages is 2.7 Watts.
3. Maximum Power Dissipation for VQFP packages is 2.3 Watts.
4. Maximum Power Dissipation for TQFP packages is 3.1 Watts.
Max. junction temp. (°C) – Max. commercial temp.
θja (°C/W)
-----------------------------------------------------------------------------------------------------------------------------
150°C – 70°C
33°C/W
---------------------------------
2.4 W==
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