90N02 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R502-751.a
ABSOLUTE MAXIMUM RATINGS (T
J
=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage (Note 2) V
DSS
20 V
Gate-Source Voltage V
GSS
±20 V
Drain Current
Continuous (T
C
<135°C, V
GS
=10V) I
D
90 A
Pulsed I
DM
360 A
Single Pulsed Avalanche Energy (Note 3) E
AS
168 mJ
Power Dissipation P
D
54 W
Junction Temperature T
J
+150 °C
Storage Temperature T
STG
-55~+150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting T
J
=25~150°C
3. Starting T
J
=25°C , L = 0.42mH, I
AS
= 90A
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient
JA
62.5 °C/W
Junction to Case
JC
2.3 °C/W
ELECTRICAL CHARACTERISTICS (T
J
=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
I
D
=250µA, V
GS
=0V 20 V
Drain-Source Leakage Current I
DSS
V
DS
=20V, V
GS
=0V 1 µA
Gate-Source Leakage Current
Forward
I
GSS
V
GS
=+20V, V
DS
=0V +100 nA
Reverse V
GS
=-20V, V
DS
=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage V
GS
TH
V
DS
=V
GS
, I
D
=250µA 0.9 2.8 2.5 V
Static Drain-Source On-State Resistance R
DS
ON
V
GS
=10V, I
D
=90A 5.1 7 m
DYNAMIC PARAMETERS
Input Capacitance C
ISS
V
GS
=0V, V
DS
=20V, f=1.0MHz
3565 pF
Output Capacitance C
OSS
1310 pF
Reverse Transfer Capacitance C
RSS
395 pF
SWITCHING PARAMETERS
Total Gate Charge at 20V Q
G
V
DD
=20V, I
D
=90A, R
L
=0.4
46 60 nC
Gate to Source Charge
Q
GS
6.9 nC
Gate to Drain Charge
Q
GD
9.8 nC
Turn-ON Delay Time t
D
ON
V
DD
=20V, I
D
=90A, R
L
=0.4,
V
GS
=10V, R
GS
=2.5
9 ns
Rise Time t
R
106 ns
Turn-OFF Delay Time t
D
OFF
53 ns
Fall-Time
t
F
41 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage V
SD
I
SD
=90A 0.9 1.25 V