NPN TRANSISTOR 8050
1.5A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION
Collector-Emitter Breakdown Voltage BVceo V Ic=0.1mA
Collector-Base Breakdown Voltage BVcbo 45 V
Ic=100
A
Emitter-Base Breakdown Voltage BVebo V
Ie=100 A
Collector-Base Leakage Icbo 0.1 uA Vcb=40V
Collector-Emitter Leakage Iceo 0.1 uA Vce=20V
Emitter-Base Leakage Iebo 0.1 uA Veb=5V
Collector-Emitter Saturation Voltage
Vce(sat
0.6 V Ic=1500mA, Ib=50mA
Base-Emiiter Saturation Voltage Vbe(sat) 1.2 V Ic=1500mA, Ib=50mA
DC Current Gain Hfe1
Hfe2
85
50
Vce=1V,Ic=50mA
Vce=1V,I c=500mA
Collector Current Ic 1.5 A
Peak Collector Current Icp 8 A(Pulse)
Current Gain Bandwidth f
T
MHz Vcb=6V, Ic=20mA
Output Capacitance Cob 32 pF Vcb=20V,Ie=0,f=1MHz
Power Dissipation Pc 1.0 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
Hfe1 Classification
Rank B C D
Range 85-160 120-200 160-300
STANSON TECHNOLOGY
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