BCRTM-45
ns
ns
ns
ns
ns
ns
400
MCLK-10
THMC1-10
THMC1-10
0
THMC2-10
(ADDRESS hold)
(ADDRESS setup)
UNITSMAXMINPARAMETERSYMBOL
DATA
ADDRESS
MCLKD2
MCLK
THMC2+5
30
THMC1+10
THMC1+10
MCLK+5
THMC1 THMC2
ns
600
1. Guaranteed by test
Note:
400
t
SHL1
2
t
PW1
t
HLZ2
t
HLZ1
t
OOZL1
1,2
t
PLH2
t
IOHL1
1
t
PLH1
1
ADDRESS valid to RWR↓
RWR↓ to DATA valid NON-RAD
RAD
RWR↑ to ADDRESS High Impedance
RWR↑ to DATA High Impedance
MCLK↑ to MCLKD2↑
MCLK↑ to TSCTL/MEMCSO↓
MCLK↑ to RWR↓
RWR↓ to RWR↑
(DATA hold)
TSCTL
MEMCSO
RWR
t
PLH1
IOHL1
t
PLH2
t
SHL1
t
OOZL1
t
PW1
t
HLZ1
t
HLZ2
Figure 28. BCRTM DMA Write Timing (One-Word Write)
-5
30
2. Pre- and Post-Irradiation Limits.
ns
