1
Transistor
2SC1360, 2SC1360A
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
■
Features
●
High transition frequency f
T
.
●
Large collector power dissipation P
C
.
■
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9±0.2
2.54±0.15
0.7±0.1
4.9±0.2
8.6±0.2
0.7
+0.3
–0.2
13.5±0.53.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
50
60
45
60
4
50
1
150
–55 ~ +150
Unit
V
V
V
mA
W
˚C
˚C
2SC1360
2SC1360A
2SC1360
2SC1360A
■
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
PG
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 10V, I
E
= –10mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= –10mA, f = 100MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –10mA, f = 58MHz
min
50
60
45
60
4
20
300
22
typ max
100
100
0.4
1.5
30
Unit
nA
V
V
V
V
MHz
pF
dB
2SC1360
2SC1360A
2SC1360
2SC1360A
