Elektronische Bauelemente
2SC1213 & 2SC1213A
NPN Silicon
General Purpose Transistor
TO-92
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
1
2
3
3
2
1
FEATURE
Power dissipation
P
CM: 0.4 W (Tamb=25℃)
Collector current
I
CM: 0.5 A
Collector-base voltage
V
(BR)CBO
: 2SC1213 : 35 V
2SC1213A : 50
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage 2SC1213
2SC1213A
V(BR)
CBO
Ic= 10µA , I
E
=0
35
50
V
Collector-emitter breakdown voltage 2SC1213
2SC1213A
V(BR)
CEO
I
C
= 1 mA , I
B
=0
35
50
V
Emitter-base breakdown voltage
V
(BR)
EBO
I
E
=10µA, I
C
=0
4 V
Collector cut-off current
I
CBO
V
CB
= 20V , I
E
=0 0.5
µA
h
FE(1)
V
CE
=3V, I
C
= 10mA 60 320
DC current gain
h
FE(2)
V
CE
=3V, I
C
= 500mA 10
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 150mA, I
B
= 15 mA 0.2 0.6 V
Base-emitter volt age
V
BE
V
CE
= 3V, I
C
= 10 mA 0.75 V
CLASSIFICATION OF h
FE(1)
Rank B C D
Range
60-120 100-200 160-320
Low frequency amplifier
1. Emitter
3. Base
2. Collector
01-Jun-2002 Rev. A
Page 1 of 2
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
