SILICON PLANAR ZENER DIODES
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise)
No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance
91 1.4 400 2300 0.099
100 1.3 500 2600 0.099
110 1.1 750 3000 0.11
120 1.0 900 4000 0.11
130 0.95 1100 4500 0.11
140 0.90 1300 4500 0.11
150 0.85 1500 5000 0.11
160 0.80 1700 5500 0.11
170 0.74 1900 5500 0.11
180 0.68 2200 6000 0.11
The electrical characteristics are measured after allowing the device to stabilize for
20 seconds when mounted with a 9.525 mm (3/8") minimum lead length from the case.
The zener impedance is derived from the 50 Hz AC voltage, which results when AC current
having an RMS value equal to 10% of the DC zener current (I
or I
) is superimposed
on I
or I
Zener impedance is measured at two points to insure a sharp knee on the
breakdown curve, thereby, eliminating unstable units.
NOTE 3:
Temperature coefficient (
V
).
Test conditions for temperature coefficient are as follows.
a.
I
=7.5mA, T
=25ºC
T2=125ºC(1N5223A, B thru 1N5242A, B )
b.
I
=Rated I
, T
=25ºC
T2=125ºC(1N5243A, B thru 1N5279A, B )
Device to be temperature stabilized with current applied prior to reading brekdown voltage
at the specified ambient Rwmerature
1N5223B_5279B Rev_2 080605E
69
76
84
910.1
Max Zener Max Reverse Leakage Current
Impedance
0.1
0.1
A & B Suffix only
R
R
(Note 2)
A
V
0.1
0.1
0.1
0.1
0.1
99
106
114
122
129
137
0.1
0.1
Continental Device India Limited
Data Sheet Page 3 of 5