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SWI4N60

SWI4N60首页预览图
型号: SWI4N60
PDF文件:
  • SWI4N60 PDF文件
  • SWI4N60 PDF在线浏览
功能描述: N-channel I-PAK/D-PAK/TO-220F MOSFET
PDF文件大小: 946.27 Kbytes
PDF页数: 共7页
制造商: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.]
制造商LOGO: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.] LOGO
制造商网址: http://www.samwinsemi.com
捡单宝SWI4N60
供应商
型号
品牌
封装
批号
库存数量
备注
询价
  • 深圳市骏凯诚科技有限公司

    5

    0755-8273180213652405995朱小姐深圳市福田区华强北街道上步工业区501栋401室我司诚信销售芯片十余载 原装的品质 合理的价格一直是我们发展的宗旨,期待您的咨询!QQ不稳定,如没有回复,请打电话0755-82731802或13652405995(微信同号)11013878

  • SWI4N60V
  • VBSEMI 
  • TO-251 
  • 23+ 
  • 5000 
  • 只做原装 

  • 深圳市天卓伟业电子有限公司

    8

    0755-8257355217302670049陈敏深圳市福田区华强北路1019号A座13楼11012046

  • SWI4N60V
  • S 
  • TO-251 
  • 19+ 
  • 18000 
  • 终端可以免费供样,支持BOM配单!原装正品 

  • 深圳市坤融电子有限公司

    16

    0755-2399097517318082080,13510287235肖瑶,树平航都大厦11FG11012384

  • SWI4N60V
  • S 
  • TO-251 
  • 2021+ 
  • 36530 
  • 专业配单100%原装进口 

  • 集好芯城

    16

    0755-8328588218188616606陈妍深圳市福田区深南中路3023号汉国中心55楼11010804

  • SWI4N60V
  • VBSEMI/台湾微碧 
  • TO-251 
  • 最新批? 
  • 34779 
  • 原厂原装现货匹配 

PDF页面索引
120%
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 3.0
Features
High ruggedness
R
DS(ON)
(Max 2.5 )@V
GS
=10V
Gate Charge (Typ 11nC)
Improved dv/dt Capability
100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
N-channel I-PAK/D-PAK/TO-220F MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-251 TO-252 TO-220F
V
DSS
Drain to Source Voltage 600 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 4* A
Continuous Drain Current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to Source Voltage
± 30
V
E
AS
Single pulsed Avalanche Energy (note 2) 271 mJ
E
AR
Repetitive Avalanche Energy (note 1) 50 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 140 144.5 19.1 W
Derating Factor above 25
o
C 1.1 1.2 0.152 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251 TO-252 TO-220F
R
thjc
Thermal resistance, Junction to case 0.91 0.87 6.56
o
C/W
R
thcs
Thermal resistance, Case to Sink
o
C/W
R
thja
Thermal resistance, Junction to ambient 76.1 78.9 48.32
o
C/W
1/7
*. Drain current is limited by junction temperature.
BV
DSS
: 600V
I
D
: 4A
R
DS(ON)
: 2.5
SW4N60B
SAMWIN
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW I 4N60
SW4N60B TO-251 TUBE
2 SW D 4N60
SW4N60B TO-252 REEL
3 SW F 4N60
SW4N60B TO-220F TUBE
TO-251
1
2
3
TO-252
1
2
3
1. Gate 2. Drain 3. Source
TO-220F
1
3
2
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