Copyr ight@ SEM IPOW E R Ele ctronic Technology Co., Ltd. All rights reser ved. July. 2013. Rev. 3.0 1/5
Features
■ High ruggedness
■ R
DS(ON)
(Max 2.2Ω)@V
GS
=10V
■ Gate Charge (Ty pical 22nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
N-channel TO-220F MO SFET
A bsolute maxi mu m ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 600 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 5.0* A
Continuous Drain Current (@T
C
=100
o
C) 3.15* A
I
DM
Drain current pulsed (note 1) 20 A
V
GS
Gate to Source Voltage ±30 V
E
AS
Single pulsed Avalanche Energy (note 2) 135 mJ
E
AR
Repetitive Avalanche Energy (note 1) 27 mJ
dv/dt Peak diode Recov ery dv / dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 24 W
Derating Factor above 25
o
C 0.19 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Max imum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Ther mal ch aracteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 5.3
o
C/W
R
thcs
Thermal resistance, Case to Sink -
o
C/W
R
thja
Thermal resistance, Junction to ambient 49
o
C/W
*. Drain current is lim ited by junction tem perature.
BV
DSS
: 600V
I
D
: 5.0A
R
DS(ON)
: 2.2ohm
1
2
3
1. Gate 2. Drain 3. Source
TO-220F
SW5N60
SAMWIN
1
2
3
Or der Code s
Item Sales Type Marking Package Packaging
1 SW F 5N60
SW5N60 TO-220F TUBE