Copyr ight@ SEM IPOW E R Ele ctronic Technology Co., Ltd. All rights reser ved. July. 2013. Rev. 3.0 1/5
SW12N65B
Features
■ High ruggedness
■ R
DS(ON)
(Max 0.85 Ω)@V
GS
=10V
■ Gate Charge (Ty pical 28nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology
like a electronic ballast, and also low power switching mode power appliances.
N-channel TO-220F MOSFET
A bsolute maxi mu m ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 650 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 12.0* A
Continuous Drain Current (@T
C
=100
o
C) 7.6* A
I
DM
Drain current pulsed (note 1) 48 A
V
GS
Gate to Source Voltage ±30 V
E
AS
Single pulsed Avalanche Energy (note 2) 790 mJ
E
AR
Repetitive Avalanche Energy (note 1) 104 mJ
dv/dt Peak diode Recov ery dv / dt (note 3) 4.5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 54 W
Derating Factor above 25
o
C 0.43 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Max imum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Ther mal ch aracteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 2.3
o
C/W
R
thcs
Thermal resistance, Case to Sink -
o
C/W
R
thja
Thermal resistance, Junction to ambient 45.3
o
C/W
*. Drain current is lim ited by junction tem perature.
BV
DSS
: 650V
I
D
: 12.0A
R
DS(ON)
: 0.85ohm
1. Gate 2. Drain 3. Source
1
2
3
TO-220F
SAMWIN
Item Sales Type Marking Package Packaging
1 SW F 12N65B
SW12N65 TO-220F TUBE
Or der Code s
1
2
3
