Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2015. Rev. 1.0 1/6
SW9N10V
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 100 V
I
D
Continuous drain current (@T
C
=25
o
C) 9* A
Continuous drain current (@T
C
=100
o
C) 5.7* A
I
DM
Drain current pulsed (note 1) 36 A
V
GS
Gate to source voltage
± 16
V
E
AS
Single pulsed avalanche energy (note 2) 64 mJ
E
AR
Repetitive avalanche energy (note 1) 7 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 44 W
Derating factor above 25
o
C 0.35 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 2.84
o
C/W
R
thja
Thermal resistance, Junction to ambient 62.5
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW D 9N10V
SW9N10V TO-252 REEL
N-channel Enhanced mode TO-252 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 86mΩ)@V
GS
=10V
(Typ 96mΩ)@V
GS
=4.5V
Low Gate Charge (Typ 22nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Synchronous Rectification, DC-DC
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
BV
DSS
: 100V
I
D
: 9A
R
DS(ON)
: 86mΩ@VGS=10V
96mΩ@VGS=4.5V
1
2
3
TO-252
1
2
3