Copyr ight@ SEM IPOW E R Ele ctronic Technology Co., Ltd. All rights reser ved. July. 2013. Rev. 3.0 1/5
Features
■ High ruggedness
■ R
DS(ON)
(Max 1.5 Ω)@V
GS
=10V
■ Gate Charge (Ty pical 57nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
N-channel TO-220F MOSFET
A bsolute maxi mu m ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 900 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 8.0* A
Continuous Drain Current (@T
C
=100
o
C) 5* A
I
DM
Drain current pulsed (note 1) 32 A
V
GS
Gate to Source Voltage ±30 V
E
AS
Single pulsed Avalanche Energy (note 2) 928 mJ
E
AR
Repetitive Avalanche Energy (note 1) 130 mJ
dv/dt Peak diode Recov ery dv / dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 69 W
Derating Factor above 25
o
C 0.5 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Max imum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Ther mal ch aracteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 1.8
o
C/W
R
thcs
Thermal resistance, Case to Sink -
o
C/W
R
thja
Thermal resistance, Junction to ambient 46.7
o
C/W
*. Drain current is lim ited by junction tem perature.
BV
DSS
: 900V
I
D
: 8.0A
R
DS(ON)
: 1.5ohm
SW8N90
SAMWIN
1
2
3
Or der Code s
Item Sales Type Marking Package Packaging
1 SW F 8N90
SW8N90 TO-220F TUBE
1
2
3
1. Gate 2. Drain 3. Source
TO-220F