Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2015. Rev. 1.0 1/6
SW8N65K
N-channel Enhanced mode TO-262 MOSFET
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 8* A
Continuous drain current (@T
C
=100
o
C) 5* A
I
DM
Drain current pulsed (note 1) 32 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 150 mJ
E
AR
Repetitive avalanche energy (note 1) 25 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 125 W
Derating factor above 25
o
C 1 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 1.0
o
C/W
R
thja
Thermal resistance, Junction to ambient 66
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 650V
I
D
: 8A
R
DS(ON)
: 0.53Ω
1. Gate 2. Drain 3. Source
TO-262
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW U 8N65K
SW8N65K TO-262 TUBE
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 0.53Ω)@V
GS
=10V
Low Gate Charge (Typ 20nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:LED,Charge,PC Power
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
