Copyr ight @ SEMIP O WER Ele c t ronic Te c hnology Co., Ltd. All right s rese rved.
Oct. 2015. Rev. 2.0 1/6
SW8N65A1
A bsolute maxi mu m ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 8* A
Continuous drain current (@T
C
=100
o
C) 5* A
I
DM
Drain current pulsed (note 1) 32 A
V
GS
Gate to source voltage ±30 V
E
AS
Single pulsed avalanche energy (note 2) 284 mJ
E
AR
Repetitive avalanche energy (note 1) 33 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 31 W
Derating factor above 25
o
C 0.25 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Th ermal ch aracteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 4.03
o
C/W
R
thja
Thermal resistance, Junction to ambient 44.3
o
C/W
*. Drain current is limited by j unction tem perature.
1. Gate 2. Drain 3. Source
TO-220F
Or der Code s
Item Sales Type Marking Package Packaging
1 SW F 8N65A1 SW8N65A1 TO-220F TUBE
1
2
3
N-channel Enhanced mode TO-220F MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 1.2Ω)@V
GS
=10V
Low Gate Charge (Typ 31nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Charge,LED,PC Power
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 650V
I
D
: 8A
R
DS(ON)
: 1.2Ω
1
2
3