Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0 1/5
SAMWIN
Features
■ High ruggedness
■ R
DS(ON)
(Max 1.5 Ω)@V
GS
=10V
■ Gate Charge (Typical 30nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology like
a electronic ballast, and also low power switching mode power appliances.
N-channel MOSFET
A bsolute maxi mu m ratings
Symbol Parameter
Value
Unit
TO-220 TO-220F
V
DSS
Drain to Source Voltage 500 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 5.5 5.5* A
Continuous Drain Current (@T
C
=100
o
C) 3.8 3.8* A
I
DM
Drain current pulsed (note 1) 22 A
V
GS
Gate to Source Voltage ±30 V
E
AS
Single pulsed Avalanche Energy (note 2) 240 mJ
E
AR
Repetitive Avalanche Energy (note 1) 16 mJ
dv/dt Peak diode Recov ery dv/ dt (note 3) 3 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 135 39* W
Derating Factor above 25
o
C 1.08 0.31 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Ther mal ch aracteristics
Symbol Parameter
Value
Unit
TO-220 TO-220F
R
thjc
Thermal resistance, Junction to case 0.92 3.16
o
C/W
R
thcs
Thermal resistance, Case to Sink 0.5 -
o
C/W
R
thja
Thermal resistance, Junction to ambient 65
o
C/W
*. Drain c urrent is lim ited by junction tem perature.
BV
DSS
: 500V
I
D
: 5. 5A
R
DS(ON)
: 1. 5ohm
1
2
3
1. Gate 2. Drain 3. Source
TO-220F
1
2
3
1
2
3
TO-220
SW830
Item Sales Type Marking Package Packaging
1 SW P 830 SW830 TO-220 TUBE
2 SW F 830 SW830 TO-220F TUBE
Or der Code s
