Copyr ight @ SEMIP O WER Ele c t ronic Te c hnology Co., Ltd. All right s rese rved.
SW7N70K
Oct. 2015. Rev. 3.0 1/7
N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220 MOSFET
A bsolute maxi mu m ratings
Symbol Parameter
Value
Unit
TO-220F TO-251 TO-252 TO-220
V
DSS
Drain to source voltage 700 V
I
D
Continuous drain current (@T
C
=25
o
C) 7* A
Continuous drain current (@T
C
=100
o
C) 4.4* A
I
DM
Drain current pulsed (note 1) 28 A
V
GS
Gate to source voltage ±30 V
E
AS
Single pulsed avalanche energy (note 2) 120 mJ
E
AR
Repetitive avalanche energy (note 1) 9 mJ
dv/dt Peak diode recov ery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 24.5 147 156 133 W
Derating factor above 25
o
C 0.2 1.2 1.3 1.06 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Th ermal ch aracteristics
Symbol Parameter
Value
Unit
TO-220F TO-251 TO-252 TO-220
R
thjc
Thermal resistance, Junction to case 5.10 0.85 0.80 0.94
o
C/W
R
thja
Thermal resistance, Junction to ambient 49.40 80.00 55.7
o
C/W
*. Drain current is limited by j unction tem perature.
BV
DSS
: 700V
I
D
: 7A
R
DS(ON)
: 0.81Ω
1
2
3
Or der Code s
Item Sales Type Marking Package Packaging
1 SW F 7N70K SW7N70K TO-220F TUBE
2 SW I 7N70K SW7N70K TO-251 TUBE
3 SW D 7N70K SW7N70K TO-252 REEL
4 SW P 7N70K SW7N70K TO-220 TUBE
1. Gate 2. Drain 3. Source
1
2
3
TO-220F
TO-251 TO-252
1
1
2
2
3
3
TO-220
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 0.81Ω)@V
GS
=10V
Low Gate Charge (Typ 17nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charge,LED,TV-Power
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.