Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Dec. 2016. Rev. 6.0 1/7
SW7N65K
N-channel Enhanced mode TO-220F/TO-220SF/TO-251/
TO-252/TO-220 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220F/
TO-220SF
TO-251 TO-252 TO-220
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 7* A
Continuous drain current (@T
C
=100
o
C) 4.4* A
I
DM
Drain current pulsed (note 1) 28 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 150 mJ
E
AR
Repetitive avalanche energy (note 1) 7.6 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 22.4 152.6 148.8 161.7 W
Derating factor above 25
o
C 0.18 1.22 1.19 1.29 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220F/
TO-220SF
TO-251 TO-252 TO-220
R
thjc
Thermal resistance, Junction to case 5.57 0.82 0.84 0.77
o
C/W
R
thja
Thermal resistance, Junction to ambient 49.1 81.9 56
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 650V
I
D
: 7A
R
DS(ON)
:0.5 Ω
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW F 7N65K
SW7N65K TO-220F TUBE
2 SW MN 7N65K
SW7N65K TO-220SF TUBE
3 SW I 7N65K SW7N65K TO-251 TUBE
4 SWD 7N65K SW7N65K TO-252 REEL
5 SWP 7N65K SW7N65K TO-220 TUBE
1. Gate 2. Drain 3. Source
TO-220F
TO-251 TO-252
TO-220
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 0.5Ω)@V
GS
=10V
Low Gate Charge (Typ 21nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charge,LED,PC Power
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
1
2
3
1
2
3
1
2
3
1
2
3
TO-220SF
