Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2017. Rev. 5.0 1/7
SW7N65D
N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-251 TO-251N TO-252 TO-220F
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 7* A
Continuous drain current (@T
C
=100
o
C) 4.4* A
I
DM
Drain current pulsed
(note 1)
28 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 430 mJ
E
AR
Repetitive avalanche energy (note 1) 40 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 208.3 173.6 27.8 W
Derating factor above 25
o
C 1.67 1.39 0.22 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220 TO-251 TO-251N TO-252 TO-220F
R
thjc
Thermal resistance, Junction to case 0.6 0.72 4.5
o
C/W
R
thja
Thermal resistance, Junction to ambient 60 82 50
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 650V
I
D
: 7A
R
DS(ON)
: 1.1Ω
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW P 7N65D
SW7N65D TO-220 TUBE
2 SW I 7N65D
SW7N65D TO-251 TUBE
3 SW N 7N65D
SW7N65D TO-251N TUBE
4 SW D 7N65D
SW7N65D TO-252 REEL
5 SW F 7N65D
SW7N65D TO-220F TUBE
1. Gate 2. Drain 3. Source
TO-220
TO-251 TO-252
TO-220F
Features
High ruggedness
Low R
DS(ON)
(Typ 1.1Ω)@V
GS
=10V
Low Gate Charge (Typ 30nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Charge,LED,PC Power
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
TO-251N