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SW7N65DW
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 7* A
Continuous drain current (@T
C
=100
o
C) 4.4* A
I
DM
Drain current pulsed (note 1) 28 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 151 mJ
E
AR
Repetitive avalanche energy (note 1) 14 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 179 W
Derating factor above 25
o
C 1.4 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.7
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW B 7N65DW
SW7N65DW TO-263 TUBE
N-channel Enhanced mode TO-263 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 0.96Ω)@V
GS
=10V
Low Gate Charge (Typ 34nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: LED , Charge, PC Power
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 650V
I
D
: 7A
R
DS(ON)
: 0.96Ω
1
2
3
TO-263
1
2
3
Jan. 2017. Rev. 3.0 1/6
