Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev.1.0
Features
■ High ruggedness
■ R
DS(ON)
(Max 0.6Ω)@V
GS
=10V
■ Gate Charge (Typical 21nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
N-channel TO-220F/I-PAK MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220F TO-251
V
DSS
Drain to Source Voltage 600 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 7* A
Continuous Drain Current (@T
C
=100
o
C) 4.4* A
I
DM
Drain current pulsed (note 1) 28 A
V
GS
Gate to Source Voltage
± 30
V
E
AS
Single pulsed Avalanche Energy (note 2) 120 mJ
E
AR
Repetitive Avalanche Energy (note 1) 8 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 24 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 19.8 166.7 W
Derating Factor above 25
o
C 0.16 1.33 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220F TO-251
R
thjc
Thermal resistance, Junction to case 6.32 0.75
o
C/W
R
thcs
Thermal resistance, Case to Sink
o
C/W
R
thja
Thermal resistance, Junction to ambient 47.56 80.52
o
C/W
1/6
*. Drain current is limited by junction temperature.
BV
DSS
: 600V
I
D
: 7.0A
R
DS(ON)
:0.6 ohm
1. Gate 2. Drain 3. Source
TO-220F
SW7N60K
SAMWIN
1
2
3
Item Sales Type Marking Package Packaging
1 SW F 7N60
SW7N60K TO-220F TUBE
2 SW I 7N60
SW7N60K TO-251 TUBE
Order Codes
TO-251
1
2
3
1
2
3