Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0 1/5
SAMWIN
Features
■ High ruggedness
■ R
DS(ON)
(Max 8m Ω)@V
GS
=10V
■ Gate Charge (Typ 126nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
N-channel MOSFET
A bsolute maxi mu m ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 75 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 75* A
Continuous Drain Current (@T
C
=100
o
C) 70* A
I
DM
Drain current pulsed (note 1) 28 A
V
GS
Gate to Source Voltage ±30 V
E
AS
Single pulsed Avalanche Energy (note 2) 1004 mJ
E
AR
Repetitive Avalanche Energy (note 1) 45 mJ
dv/dt Peak diode Recovery dv/ dt (note 3) 7 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 312 W
Derating Factor above 25
o
C 2.5 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Ther mal ch aracteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.4
o
C/W
R
thcs
Thermal resistance, Case to Sink 0.5
o
C/W
R
thja
Thermal resistance, Junction to ambient 60
o
C/W
BV
DSS
: 75V
I
D
: 75A
R
DS(ON)
: 8mΩ
1. Gate 2. Drain 3. Source
1
2
3
SW75N75
Item Sales Type Marking Package Packaging
1 SW P 75N75 SW 75N75 TO-220 TUBE
Or der Code s
*. Drain current is limited by junction temperature.