Copyr ight@ SEM IPOW E R Ele ctronic Technology Co., Ltd. All rights reser ved. July. 2013. Rev. 3.0 1/5
Features
■ High ruggedness
■ R
DS(ON)
(Max 0.55Ω)@V
GS
=10V
■ Gate Charge (Ty pical 38nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching
mode power appliances.
N-channel TO-220 MOSFET
A bsolute maxi mu m ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 400 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 10* A
Continuous Drain Current (@T
C
=100
o
C) 6.3* A
I
DM
Drain current pulsed (note 1) 40 A
V
GS
Gate to Source Voltage ±30 V
E
AS
Single pulsed Avalanche Energy (note 2) 1200 mJ
E
AR
Repetitive Avalanche Energy (note 1) 170 mJ
dv/dt Peak diode Recov ery dv / dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 226 W
Derating Factor above 25
o
C 1.8 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Max imum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Ther mal ch aracteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.55
o
C/W
R
thcs
Thermal resistance, Case to Sink 0.5
o
C/W
R
thja
Thermal resistance, Junction to ambient 58
o
C/W
BV
DSS
: 400V
I
D
: 10A
R
DS(ON)
: 0.55ohm
1
2
3
1. Gate 2. Drain 3. Source
1
2
3
TO-220
SW740U
SAMWIN
Item Sales Type Marking Package Packaging
1 SW P 740U
SW740 TO-220 TUBE
Or der Code s