Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0 1/7
SW70N10V
N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-251 TO-252 TO-220
V
DSS
Drain to source voltage 95 V
I
D
Continuous drain current (@T
C
=25
o
C) 70* A
Continuous drain current (@T
C
=100
o
C) 44* A
I
DM
Drain current pulsed (note 1) 280 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 351 mJ
E
AR
Repetitive avalanche energy (note 1) 24 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 69.4 125 179 W
Derating factor above 25
o
C 0.55 1.00 1.4 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251 TO-252 TO-220
R
thjc
Thermal resistance, Junction to case 1.8 1.0 0.7
o
C/W
R
thja
Thermal resistance, Junction to ambient 92 56
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 95V
I
D
: 70A
R
DS(ON)
: 11.7mΩ @V
GS
=10V
12.4mΩ @V
GS
=4.5V
1. Gate 2. Drain 3. Source
TO-251
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW I 70N10V
SW70N10V TO-251 TUBE
2 SW D 70N10V
SW70N10V TO-252 REEL
3 SW P 70N10V
SW70N10V TO-220 TUBE
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 11.7mΩ)@V
GS
=10V
Low R
DS(ON)
(Typ 12.4mΩ)@V
GS
=4.5V
Low Gate Charge (Typ 117nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
1
2
3
TO-252 TO-220
1
2
3