Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 2.0 1/6
SW70N08V
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 80 V
I
D
Continuous drain current (@T
C
=25
o
C) 70* A
Continuous drain current (@T
C
=100
o
C) 44* A
I
DM
Drain current pulsed (note 1) 280 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 356 mJ
E
AR
Repetitive avalanche energy (note 1) 18 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 184 W
Derating factor above 25
o
C 1.5 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.68
o
C/W
R
thja
Thermal resistance, Junction to ambient 80
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW I 70N08V
SW70N08V TO-251 TUBE
N-channel Enhanced mode TO-251 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 13mΩ)@V
GS
=4.5V
(Typ 12mΩ)@V
GS
=10V
Low Gate Charge (Typ 84nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 80V
I
D
: 70A
R
DS(ON)
: 13mΩ @V
GS
=4.5V
12mΩ @V
GS
=10V
1
2
3
TO-251
1
2
3