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SW70N08V

SW70N08V首页预览图
型号: SW70N08V
PDF文件:
  • SW70N08V PDF文件
  • SW70N08V PDF在线浏览
功能描述: N-channel Enhanced mode TO-251 MOSFET
PDF文件大小: 636.44 Kbytes
PDF页数: 共6页
制造商: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.]
制造商LOGO: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.] LOGO
制造商网址: http://www.samwinsemi.com
捡单宝SW70N08V
PDF页面索引
120%
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 2.0 1/6
SW70N08V
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 80 V
I
D
Continuous drain current (@T
C
=25
o
C) 70* A
Continuous drain current (@T
C
=100
o
C) 44* A
I
DM
Drain current pulsed (note 1) 280 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 356 mJ
E
AR
Repetitive avalanche energy (note 1) 18 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 184 W
Derating factor above 25
o
C 1.5 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.68
o
C/W
R
thja
Thermal resistance, Junction to ambient 80
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW I 70N08V
SW70N08V TO-251 TUBE
N-channel Enhanced mode TO-251 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 13m)@V
GS
=4.5V
(Typ 12m)@V
GS
=10V
Low Gate Charge (Typ 84nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 80V
I
D
: 70A
R
DS(ON)
: 13m @V
GS
=4.5V
12m @V
GS
=10V
1
2
3
TO-251
1
2
3
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